Japanese Government Procurement
National University Corporation - Notice of request for submission of materialsMulti-Purpose Dry Etcher 1 Set
This procurement is covered by the WTO Agreement on Government Procurement, Japan-EU Economic Partnership Agreement or Japan-UK Comprehensive Economic Partnership Agreement.
| Publishing date | Mar 26, 2025 |
|---|---|
| Type of notice | Notice of request for submission of materials |
| Procurement entity | National University Corporation - Miyagi |
| Classification |
0024 Professional/Scientific & Controlling Instruments & Apparatus |
| Summay of notice | ⑴ Classification of the products to be procured : 24 ⑵ Nature and quantity of the products to be purchased : Multi-Purpose Dry Etcher 1 Set ⑶ Type of the procurement : Purchase ⑷ Basic requirements of the procurement : A The system must have a wafer transfer mechanism. B The system must have a load lock chamber, and wafer transfer between the process chamber and the load lock chamber must be possible under vacuum conditions. C The load lock chamber must have a wafer cassette, and it must be capable of automatically processing at least 10 wafers continuously. D The system must be capable of etching wafers of various sizes, ranging from 20 mm square to a diameter of 8 inches. E The system must support automated transfer using wafer cassettes for 4-inch (JEITA/SEMI), 6-inch (JEITA/SEMI), and 8-inch (notched) wafers. F The system must be able to use at least chlorine-based, fluorine-based, argon, oxygen, and nitrogen gases for etching. G The system must be capable of high-throughput and anisotropic etching of hard-to-etch materials such as piezoelectric lithium niobate (LiNbO3 : LN) substrates, lithium tantalate (LiTaO3 : LT) substrates, quartz, and silicon carbide (SiC) substrates. Also, when the pattern size is around 100-500 nm, anisotropic etching with a high aspect ratio must be capable. Reference data must be submitted. H The plasma used for etching must be generated at low pressure and must be high-density. I The process pressure during etching must be 1 Pa or lower. J The bias voltage and plasma density on the wafer should be independently controllable. K The etching distribution within an 8-inch wafer should be within 5%. L Process monitoring (endpoint detection of a process) should be possible by emission spectroscopy. M The etching chamber should have a structure that can be added later. N The log of various measured values of the equipment during etching must be output in a readable format. O The process recipe must be output in a readable format. P The control system should be connected to a LAN, and log files and recipe files should be exportable via LAN. ⑸ Time limit for the submission of the requested material : 17 : 00 28 April, 2025 ⑹ The same as the notice above No.24. |
