Japanese Government Procurement
National University Corporation - Notice of request for submission of materialsSpintronics Material Deposition and Device Fabrication System 1 Set
This procurement is covered by the WTO Agreement on Government Procurement, Japan-EU Economic Partnership Agreement or Japan-UK Comprehensive Economic Partnership Agreement.
| Publishing date | Jun 06, 2022 |
|---|---|
| Type of notice | Notice of request for submission of materials |
| Procurement entity | National University Corporation - Miyagi |
| Classification |
0024 Professional/Scientific & Controlling Instruments & Apparatus |
| Summay of notice | ⑴ Classification of the products to be procured : 24 ⑵ Nature and quantity of the products to be purchased : Spintronics Material Deposition and Device Fabrication System 1 Set ⑶ Type of the procurement : Purchase ⑷ Basic requirements of the procurement : A Innovative spintronics materials deposition equipment a Thin film can be deposited by DC and RF magnetron sputtering on 300 mmΦ substrate using more than three type of gases under ultra-high vacuum background pressure. b More than 50 substrates can be sequentially processed by program control. c More than 16 cathodes are equipped and co-sputtering deposition using more than 2 cathodes is possible. d Temperature of substrate can be controlled at any temperature in the range including 50~200℃ and 350~450℃ during deposition, and can controlled at any temperature in the range including 80~200K (-193~-73℃) and 300~600℃ before deposition or after deposition. e Magnetic tunnel junction film with perpendicular magnetic easy axis that comprises CoFeB and MgO and that shows the following properties at the measurement temperature ranging from 0 to 30℃ after annealing at 400℃ can be prepared on substrate within 90 minutes. ⑴ Difference between reversal fields of free layer and fixed layer is more than 50 mT. ⑵ Tunnel magnetoresistance ratio is more than 160%. ⑶ Product of resistance and junction area (RA) is less than 10 Ωμ㎡. ⑷ Variability of RA in the central region of substrate over 130 mm in radius is less than ±5%. f More than 4 extension modules including device fabrication process module are connectable. B Spintronics device fabrication equipment a Thin film can be deposited by DC magnetron sputtering on 300 mmΦ substrate using more than three type of gases under ultra-high vacuum background pressure. b More than 4 cathodes are equipped and co-sputtering deposition using more than 2 cathodes is possible. c Temperature of substrate can be controlled at any temperature in the range including 350~450℃ during deposition. d Thin films on substrate with the diameter of 300 mm can be etched with rotating and changing the angle between substrate and etching source from 0 to 90 degree, where 0 degree means that normal to the substrate is align to normal to the etching source. e Etching end point can be detected. f Connectable with (A) Innovative spintronics materials deposition equipment and capable to deposit and etch 300 mmΦ substrate transferred from the system by program control. ⑸ Time limit for the submission of the requested material : 17 : 00 7 July, 2022 ⑹ Contact point for the notice : Shigehiro Akiyama, Procurement Services Office, Finance Department, Tohoku University, 2-1-1 Katahira Aoba-ku Sendai-shi 980-8577 Japan, TEL 022-217-4869 |
